| PART |
Description |
Maker |
| HY5DU283222F HY5DU283222F-26 HY5DU283222F-33 HY5DU |
GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| HY5DU283222Q HY5DU283222Q-45 HY5DU283222Q-55 HY5DU |
GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| HY5DS283222BF HY5DS283222BF-28 HY5DS283222BF-33 HY |
GDDR SDRAM - 128Mb
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DW283222AF HY5DW283222AF-22 HY5DW283222AF-25 HY |
GDDR SDRAM - 128Mb
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DW283222BF HY5DW283222BF-2 HY5DW283222BF-22 HY5 |
128M(4Mx32) GDDR SDRAM
4M X 32 DDR DRAM, 0.6 ns, PBGA144 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144
|
Hynix Semiconductor, Inc.
|
| PUMA67S4000M-020 PUMA67S4000M-35 PUMA2S4000M-020 P |
SRAM|128KX32|CMOS|LDCC|68PIN|CERAMIC
2NS, 352 BGA, COM TEMP(FPGA)
SRAM|128KX32|CMOS|PGA|66PIN|CERAMIC
10 MHZ, 3.3V, 44 PLCC, IND TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA) 静态存储器| 128KX32 |的CMOS |美巡赛| 66PIN |陶瓷
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQMA68
|
NIC Components, Corp.
|
| PMMAD1103 |
ultra low capa citance multi-line steering diode arra y
|
Protek Devices
|
| AS5SS256K18DQ-10/IT AS5SS256K18DQ-10/XT AS5SS256K1 |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
256K x 18 SSRAM Synchronous Burst SRAM. Flow-Through 256 × 18的SSRAM同步突发静态存储器。流通过
|
Austin Semiconductor, Inc
|
| K4S283232E K4S283232E-TC1L K4S283232E-TC60 |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4Mx32 SDRAM
|
SAMSUNG
|
| PC755M8 PC755M8VG300LE PC755M8VG350LE |
32-bit RISC PowerPC-based Multichip Module
RISC microprocessor. 8 Mbits: 128K x 72 SSRAM. Core frequency: 300 MHz/150 L2 cache.
RISC microprocessor. 8 Mbits: 128K x 72 SSRAM. Core frequency: 350 MHz/175 MHz L2 cache.
|
Atmel
|
| AS5SS256K18DQ-10_IT AS5SS256K18DQ-10_XT AS5SS256K1 |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
Austin Semiconductor
|
